Abstract
The properties of tantalum oxide metal–insulator–metal (MIM) capacitors with bottom electrodes were investigated. An ultrathin Al film successfully suppresses oxygen diffusion in the MIM capacitor with the Cu-based electrode. The electrical characteristics and reliability of MIM capacitors are improved by addition of ultrathin Al films. MIM capacitors have low leakage current density ( at ) and high breakdown field ( at ). The decrease in leakage current is attributed to the formation of a dense and uniform layer, which has self-protection property and stops further oxygen diffusion into the tantalum contact. The dominant conduction mechanism of leakage current is the Poole–Frenkel effect at electric fields above .
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