High-Rate Sputtering of Thick PZT Layers for MEMS Actuators

K. Ortner,B. Wagner,Th. Jung,H.-J. Quenzer,H. Jacobsen

doi:10.1109/memsys.2006.1627774

High-Rate Sputtering of Thick PZT Layers for MEMS Actuators

K. Ortner, B. Wagner + Show 3 more

https://doi.org/10.1109/memsys.2006.1627774

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Publication Date: May 8, 2006

Citations: 10

Affiliation: Fraunhofer Institute for Surface Engineering and Thin Films, Fraunhofer Institute for Silicon Technology

#Polycrystalline Lead Zirconate Titanate #Gas Flow Sputtering + Show 8 more

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Abstract

Polycrystalline Lead Zirconate Titanate (PZT) thin films in the range of 3 µ m to 16 µ m were crack free deposited on silicon substrates in a high rate Gas Flow Sputtering process. Gas Flow Sputtering uses the hollow cathode effect which results into high deposition rates of about 200 nm/min to 250 nm/min.

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