Abstract
The high-rate reactive ion etching of c-axis oriented quasi-single-crystal barium hexaferrite (BaM) films, deposited on 6-H silicon carbide (0001) substrates, has been demonstrated. Arrays of BaM columns, having diameters of 1–4 μm and sharp vertical walls, were etched from BaM films at rates as high as 75 nm/min using an optimized sulfur hexafluoride and methyl trifluoride (SF6:CHF3, 3:1) gas mixture. Lateral features as small as 43 nm were fabricated and imaged.
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