High-rate deposition of nanostructured SiC films by thermal plasma PVD

Abstract

With ultrafine SiC powder as starting material, thermal plasma physical vapor deposition has been applied successfully to the deposition of SiC films on Si substrates. The control of processing parameters such as substrate temperature, powder feeding rate and composition of plasma gases, permits the deposition of SiCfilms on a wide area of around 400 cm2 with a variety of microstructures fromamorphous to nanostructured and with various morphologies from dense to columnar. For the nanostructured case, the crystallite size was between 3 and 15 nm and the maximum deposition rate calculated based on the actual deposition duty time reached 200 nm/s. The deposition mechanism is discussed briefly.