High‐Quality GaSb and GaInSb Crystals Prepared by Vertical Bridgman Method

Abstract

AbstractHigh‐quality GaSb and Ga1‐xInxSb (x = 0.14) crystals were grown via the vertical Bridgman (VB) method. The lattice structure, morphology, optical, and transport properties of the GaSb and GaInSb crystals were characterized. The influence of the indium doping on the physical properties of the GaSb crystal was also investigated. The results demonstrate that the indium doping maintains the zinc‐blende lattice structure of the GaSb crystal. The segregation of indium is very low, with the radial and axial concentration variation of 2.32% and 4.84%, respectively. The indium doping significantly reduces the dislocation density down to 1.275 × 103 cm−2. The band gap of the indium‐doped GaSb is reduced to 0.549 eV, consistent with the decreased infrared transmission measured by FTIR. Surprisingly, the indium doping changes the majority carrier type of the crystal, from p‐type in the pristine GaSb crystal to n‐type in the GaInSb crystal. Compared to the GaSb crystal, the GaInSb crystal shows enhanced transport properties, with carrier mobility increased to 2.512 × 103 cm2/(V•s) and resistivity reduced to 0.521 × 10−3 ohm•cm.