Abstract
We demonstrate that GaMnAs films grown with As 2 have excellent structural, electrical and magnetic properties comparable or better than similar films grown with As 4. Using As 2, a Curie temperature of 112 K has been achieved, which is slightly higher than the best reported to date. However, more significantly films showing metallic conduction have been obtained over a much wider range of Mn concentrations from 1.5% to 8% than has previously been reported for films grown with As 4. The improved properties of the films grown with As 2 are related to the lower concentration of antisite defects at the low growth temperatures employed.
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