Abstract
Carbon nanotube (CNT) growth at temperatures below 400 °C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out in order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98 nm/min was successfully obtained at 400 °C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400 °C.
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