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Abstract
Boron-doped homoepitaxial diamond (100) films with substantially flat surface have been deposited by a high-power microwave-plasma chemical-vapor-deposition (MPCVD) method. Hall mobilities of 1500cm2∕Vs at 290K and 2220cm2∕Vs at 235K were attained for such a specimen with an acceptor density of 1.4×1018cm−3 grown at a growth rate of 3.5μm∕h. These mobilities are comparable with those of the highest quality homoepitaxial diamond grown by a standard low-power MPCVD method, where the growth rate and carrier concentration were, respectively, ∼1∕30 and 1∕5 of the corresponding values attained in the present case. This fact verifies that the high-power MPCVD is suitable for deposition of a high quality and high carrier-concentration p-type diamond at a reasonably high growth rate.
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