Abstract
The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 106 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.
Highlights
High-quality (Q) factor optical microresonators capable of significantly enhancing light-matter interaction have attracted strong interest in photonics community[1]
A mean Q factor 6.75 × 106 was determined by a statistical analysis of tens of resonances
Using these devices with a Q factor up to 7.1 × 106, we have demonstrated on-chip SHG with a conversion efficiency of 3.91% W−1 even without optimization of the phase matching
Summary
High-quality (Q) factor optical microresonators capable of significantly enhancing light-matter interaction have attracted strong interest in photonics community[1]. The novel photonic devices are highly in demand for both fundamental research and practical applications, such as cavity quantum electrodynamics[2], highly sensitive sensor[3], nonlinear devices, or filter elements[4] for optical telecommunication systems, in which the high-Q factors are crucial for achieving high spectral resolution and sensitivity as well as strong nonlinear light-matter interaction. For highly functional optical microresonators, the important requirements of the material platforms are ultralow optical loss, wide transparent window, high index contrast, high nonlinearities, and industry compatible. As a mature wide bandgap material, SiC has a wide bandgap (3.26 eV for 4H polytypes), a high refractive index (2.6 at 1550 nm) and a wide transparent window (0.37–5.6 μm)[12], which can avoid multiple photon absorption that bothers the Si photonics. Unlike Si3N4 and Si, SiC exhibits the Pockels effects and can be used for low loss, ultrafast and wide bandwidth data transmission[15], which is
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