High-power mid-infrared light emitting diodes grown by MOVPE

Abstract

Light emitting diodes (LEDs) are fabricated on the basis of MOVPE-grown N-InAsSbP/n-InAsSb/P-InAsSbP heterostructures. LEDs operating in the 3.45–4.45 µm wavelength range at room temperature are produced by employing InAsSb active layers with different Sb content. The photoluminescence of InAsSb layers and electroluminescence properties of LEDs are investigated. LED light-current characteristics in both quasi-continuous wave mode and pulsed mode are also studied. Increasing LED efficiency with improved carrier confinement is observed. When operating at 50% duty cycle, the LEDs (room temperature wavelength λ=4.27 µm) produce an average power of 0.3 mW when driving an average current of 0.25 A. With a peak current of 1.4 A (5% duty cycle), the pulse power of the diodes (room temperature wavelength λ=4.27 µm) is measured as 2.5 mW.