High-power InP-based waveguide photodiodes and photodiode arrays heterogeneously integrated on SOI

Abstract

For the first time we demonstrate evanescently-coupled modified uni-traveling carrier photodiodes (MUTC PDs) on silicon-on-insulator (SOI) waveguide with an internal responsivity of 0.85 A/W, up to 15 GHz bandwidth, and high RF output power. A novel 2-element MUTC PD array has a saturation current-bandwidth-product of >630 mA*GHz and achieves +9 dBm RF output power at 20 GHz.