High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm

Abstract

High-power highly strained In/sub x/Ga/sub 1-x/As quantum-well lasers operating at 1.2 μm are demonstrated. The edge emitting broad area (BA) laser diode structures are grown by metal organic vapor phase epitaxy at low growth temperatures using trimethylgallium, trimethylindium, and arsine sources. In the laser structure, an InGaAs QW is sandwiched between the GaAs waveguide and AlGaAs cladding layers. The operating wavelength for the laser diode at room temperature (20/spl deg/C) is about 1206 nm, which redshifts to 1219 nm at 46/spl deg/C. The transparency current density for the BA laser diodes is as low as 52 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and the characteristic temperature value is 76 K. High-power laser operation in the pulse mode (about 1.6 W) at room temperature was achieved.