Abstract
lnGaAsP/lnP high-power laser diodes are particularly attractive for a variety of applications as light sources for long-span optical fiber communication systems as well as !or fault-locating measurements, remote sensing, and so on. The stable fundamental transverse mode operation has been established in developing buried heterostructure-type laser diodes. However, the cw operable power has been limited to ~70 mW (Refs. 1 and 2) due to the fairly large temperature dependence of threshold current and current leakage flowing through the blocking layer at the high-injection-current level. In this paper we report 140-mW cw operation at 1.3 µm in lnGaAsP DC-PBH LD. We believe this is the first report on exceeding 100-mW cw operation in lnGaAsP laser diodes.
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