High-power 660-nm AlGaInP laser diodes with a small aspect ratio for the beam divergence

Abstract

High-power 660-nm AlGaInP laser diodes with a small aspect ratio for beam divergence were successfully fabricated with a window mirror structure. The real index-guided structure was adopted from an investigation into internal loss dependence on the beam divergence in the perpendicular direction. A device with the aspect ration of 1.65 for the beam divergence of 10/spl deg/ and 16.5/spl deg/ in the parallel and perpendicular directions has demonstrated a kink level of 160 mW and maximum light output power of 180 mW, which was limited by thermal saturation. These laser diodes have operated reliably for more than 1500 h at 60/spl deg/C with a light output power of 90 mW under pulsed condition with a width of 100 ns and frequency of 5 MHz. High-power operation and a small aspect ratio were thus achieved, simultaneously.