High-Performance Single-Walled Carbon Nanotube-Based Thin-Film Transistors by Reducing Charge Transfer

Abstract

We demonstrate high-performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) using the simple and robust method of an interacting fluoropolymer encapsulation with thermal annealing in vacuum to reduce the charge transfer. With an optimized combination of the fabrication process and the device configuration, drop-casted SWCNT-TFTs exhibit a field-effect mobility of $\sim 18$ cm2/ $\text{V}\,\cdot \, \text{s}$ in the linear regime, an ON–OFF-current ratio of $\sim 10^{6}$ , a threshold voltage of around 0 V, and a subthreshold swing of 97 mV/decade, which is among the best results that have been achieved in 2-D random networks of the SWCNTs. We also investigate the instability characteristics in the SWCNT-TFTs encapsulated with fluoropolymer during the prolonged electrical bias-stress. Interestingly, the drop in drain current of the SWCNT-TFTs was partially recovered with a second phenomenon that increases the drain current after a certain time. The hydrophobic surface that the fluoropolymer film possesses, reduced the chemical interaction of charge carriers with the hydroxyl (–OH) functional groups which act as defects in the SWCNT-TFTs.