Abstract
High quality β-Ga2O3 single crystals were synthesized via chemical vapor deposition (CVD) method. Such single crystals of β-Ga2O3 are grown along the [110] direction to form micro/nano-sheets. Based on this micro/nano-sheet, we fabricate single crystalline Ga2O3 UV photodetector which is composed of an Au Schottky contact and a Cr contact. This device shows excellent optoelectronic performance with high sensitivity, fast response speed, excellent stability and reversibility, and an open circuit voltage of 0.33V. The excellent β-Ga2O3 micro/nano-sheet Schottky barrier UV photodetector will enable significant advancements of the next-generation photodetection and photosensing applications.
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