Abstract
Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p–n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm−2 light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 × 1012 Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months.
Highlights
Ultraviolet (UV) detection is essential in various technical fields including applications in flame sensing, environmental monitoring, and spatial optical communications [1,2,3,4]
The photovoltaic effect of p–n heterojunctions can enable the PDs to become self-powered devices, and a great deal of work has been done on making self-powered UV PDs on the basis of p–n junctions [18,19]
This difference leads the electrons in n-type porous Gallium nitride (GaN) film to move to the p-type GoPc film, while the holes in the p-type cobalt phthalocyanine (CoPc) film transferred to the n-type porous GaN film
Summary
Ultraviolet (UV) detection is essential in various technical fields including applications in flame sensing, environmental monitoring, and spatial optical communications [1,2,3,4]. The proposed device exhibited higher responsivity (R), more specific detectivity (D*), larger switch ratio (Ion/Ioff), and wider linear dynamic range (LDR) at 0 V bias to UV light compared to other single GaN-based or inorganic/inorganic hybrid based UV PDs. due to the high thermal stability of GaN and CoPc, the photoelectrical property and on/off switching behavior of our device remained the same after 3 months. Due to the high thermal stability of GaN and CoPc, the photoelectrical property and on/off switching behavior of our device remained the same after 3 months This high performance and self-powered capability PD has potential application in many areas, including UV radiation surveillance, water quality monitoring, and spatial optical communications
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