Abstract
This letter presents a summary of the first detailed investigation of electron cyclotron resonance (ECR) hydrogen plasma exposure treatments of p-channel poly-Si thin film transistors (TFT's). It is shown that ECR hydrogenation can be much more efficient than RF hydrogenation. Poly-Si p-channel TFT's fabricated at low temperatures (/spl les/625/spl deg/C) and passivated with the ECR hydrogenation treatment are shown to exhibit ON/OFF current ratios of 7.6/spl times/10/sup 7/, subthreshold swings of 0.62 V/decade, threshold voltages of -4.6 V, and hole mobilities over 18 cm/sup 2//V.s. >
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