High-performance oxide thin film transistor fully fabricated by a direct rheology-imprinting

Abstract

Operation of all oxide thin-film transistors fully fabricated by a direct rheology-imprinting technique was demonstrated. In the device, a highly conductive amorphous La-Ru-O (8 × 10−3 Ω cm) was used as the gate and source/drain electrodes. Indium oxide and amorphous La-Zr-O were utilized as the semiconducting channel and gate insulator, respectively. Silsesquioxane-based SiO2 was used both as a mask and as a passivation layer for the channel. The obtained “on/off” current ratio, field-effect mobility, threshold voltage, and subthreshold swing factor were approximately 107, 8.4 cm2 V−1 s−1, −0.18 V, and 80 mV/decade, respectively.