High-performance of asymmetric FET-based plasmonic THz detector with vertically-integrated antenna in 65-nm CMOS technology

Min Woo Ryu Min Woo Ryu,Jong-Ryul Yang Jong-Ryul Yang,Kyung Rok Kim Kyung Rok Kim,Kwan Sung Kim Kwan Sung Kim,Jeong Seop Lee Jeong Seop Lee,Seong-Tae Han Seong-Tae Han

doi:10.1109/nano.2015.7388686

High-performance of asymmetric FET-based plasmonic THz detector with vertically-integrated antenna in 65-nm CMOS technology

Min Woo Ryu Min Woo Ryu, Jong-Ryul Yang Jong-Ryul Yang + Show 4 more

https://doi.org/10.1109/nano.2015.7388686

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Publication Date: Jul 1, 2015

Affiliation: Ulsan National Institute of Science and Technology, Korea Electrotechnology Research Institute

#Terahertz #Plasmonic Terahertz Detector + Show 8 more

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Abstract

In this paper, we report the high-performance plasmonic terahertz (THz) detector based on antenna-coupled asymmetric nano-CMOS structure. For maximizing performance enhancement by nano-CMOS technology, asymmetric MOSFET is newly designed on a self-aligned gate structure and vertically-integrated patch antenna in 65-nm CMOS technology. Finally, we obtained the highly enhanced detection performance with responsivity (Rv) of 1.5 kV/W and noise-equivalent-power (NEP) of 15 pW/Hz05 at 0.2 THz.

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