Abstract
HgCdTe grown on large-area Si substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive CdZnTe substrates. The goal of this work is to evaluate the use of HgCdTe/Si for mid-wavelength/long-wavelength infrared (MWIR/LWIR) dual-band FPAs. A series of MWIR/LWIR dual-band HgCdTe triple-layer n-P-n heterojunction (TLHJ) device structures were grown by molecular-beam epitaxy (MBE) on 100-mm (211)Si substrates. The wafers showed low macro-defect density (< 300 cm ―2 ) and was processed into 20-μm-unit-cell 640 x 480 detector arrays which were mated to dual-band readout integrated circuits (ROICs) to produce FPAs. The measured 80-K cutoff wavelengths were 5.5 μm for MWIR and 9.4 μm for LWIR, respectively. The FPAs exhibited high pixel operabilities in each band, with noise equivalent differential temperature (NEDT) operabilities of 99.98% for the MWIR band and 99.6% for the LWIR band demonstrated at 84 K.
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