Abstract
Integrating graphene with other highly light absorptive materials into heterostructures is of great interest to improve the optoelectronic properties of graphene based phototransistors. Here, we fabricated a hybrid graphene-CsPbBr3 nanocrystal (NCs) phototransistor using CsPbBr3 NCs with large absorption coefficient as light absorption materials and graphene with high mobility as charge transport layer. The graphene-CsPbBr3 NCs phototransistor showed high photo response performances with responsivity (R) of 0.54 A/W at the incident light irradiation (Ee) of 56 mW/cm2. Moreover, the phototransistor exhibited rapid photo response with rise/decay time of 38/58 ms. The hybrid phototransistor has great potential applications in the photodetection and multifunction optoelectronics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
