Abstract
In this age of interconnection, photodetectors based on two-dimensional materials have been widely used in wearable physiological monitoring systems and wireless sensor networks. Hence, this paper proposes a novel WSe2 flake photodetector with a metal–semiconductor–metal structure. The photodetector achieved a high responsivity (Ri) of 2.46 A/W under the condition of an external bias voltage at 650 nm as well as an ultra-high detectivity (D*) of 0.76 × 1011 Jones. The photodetector overcomes the shortcomings of traditional photoelectric detectors with large dark currents. A small dark current of ∼1 nA was obtained, which also creates an opportunity for future high-performance photoelectric devices. After 500 bending cycles, the current and dark current of the device decreased only by 1.7%. Additionally, a self-built test platform indicated that the test device has a device response time of up to 6.51 ms, which creates an opportunity for the high-speed corresponding photoelectric devices based on WSe2 flakes in the future.
Highlights
Photodetectors, which are the core of modern communication components, are widely used in fields such as optical fiber communication, biomedical analysis systems, and the most recent remote sensing imaging.1–3 Research on a large number of photodetectors is being performed to analyze whether they satisfy certain requirements to be applied to specific areas including industrial applications
As the wavelengths of light of interest range from visible light (VL) to infrared (IR), the wavebands of the semiconductor material used in the photodetectors should be carefully selected to match the operating wavelength region
The MSM WSe2 flake photoelectric device used in the experiment was obtained by transmission in acetone
Summary
Photodetectors, which are the core of modern communication components, are widely used in fields such as optical fiber communication, biomedical analysis systems, and the most recent remote sensing imaging. Research on a large number of photodetectors is being performed to analyze whether they satisfy certain requirements to be applied to specific areas including industrial applications. High-quality WSe2 materials have been used in the photoelectric conversion fields of rechargeable batteries, dyesensitized solar cells, hydrogen-producing cells, and supercapacitors.8,21,22 All these structures require extremely complex manufacturing processes; reliable 2D material-based metal–semiconductor–metal (MSM) high-performance photodetectors are required.. The WSe2 device based on the MSM structure exhibits an ultrawide detection waveband ranging from the VL to NIR region. It has excellent optical characteristics, such as responsivity (Ri), detectivity (D∗), and device response time (τ). After 500 bending cycles, the current and dark current of the device decreased by only 1.7% These desirable optical properties, coupled with simple manufacturing processes and planar MSM structures, make it an effective photoelectric device. It has the potential to be incorporated into a variety of integrated circuits
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