Abstract
Epitaxial Na0.5K0.5NbO3 (NKN) thin films have been grown on LaAlO3 substrates by rf magnetron sputtering of a stoichiometric, high-density, ceramic target. X-ray diffraction analysis showed c-axis oriented cube-on-cube growth. Micrometer size interdigital capacitor (IDC) structures were defined on the surface of the NKN film using photolithography. The electrical characterization at 1 MHz showed dissipation factor tan δ of 0.010, tunability 16.5% at 200 kV/cm and dielectric permittivity εr=470. The frequency dispersion of εr between 1 kHz and 1 MHz was 8.5% and the IDCs showed very good insulating properties with leakage current density on the order of 30 nA/cm2 at 400 kV/cm. The polarization loop exhibits weak ferroelectric hysteresis with maximum polarization 23.5 μC/cm2 at 600 kV/cm. These results are promising for tunable microwave devices based on rf sputtered NKN thin films.
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