Abstract

This paper focuses on the design and analysis of multi-stage noise-shaping (MASH) sigma-delta modulators. Fundamentals and properties of MASH modulators are discussed. A detailed methodology on analyzing continuous-time MASH (CT-MASH) modulator based on the impulse invariant transformation is also described. Two fabricated design examples are discussed: a 130 nm CMOS CT-MASH 4-0 employing a digital pseudo-MASH compensation consumes 20mW and achieves 75 dB peak SNDR over a 15 MHz bandwidth with an active area of 1.3 mm2; a 40 nm CMOS CT-MASH 2-2 architecture achieves peak SNDR of 74.4 dB within the signal bandwidth of 50.3 MHz with power consumption of 43.0 mW and active area of 0.265 mm2.

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