Abstract
This paper presents a bulk silicon interdigital capacitive temperature sensor based on graphene oxide (GO). Compared with typical CMOS integrated temperature sensors, the sensitivity of this bulk silicon interdigital capacitive temperature sensor was improved significantly by using GO as sensing material, and this temperature sensor can operate in the range of -70° to 40°. The bulk silicon temperature sensor was composed of the bulk silicon interdigital electrodes and the GO sensing material. The bulk silicon interdigital electrodes were achieved on CMOS substrate by a post-CMOS process.
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