Abstract
A high performance 193 nm resist has been developed from a novel hybrid copolymer based on a cycloolefin-maleic anhydride and methacrylate (COMA/Methacrylate) polymer system. A variety of copolymers have been synthesized from t-butyl norbornene carboxylate (BNC), t-butyl tetracyclo [4.4.0.1.<SUP>2,6</SUP>1<SUP>7,10</SUP>]dodec-8-ene-3-carboxylate (BTCDC), and 5-[2-trifluoromethyl-2,1,1-trifluoro-2-hydroxypropyl]-2- norbornene (F1) with different types of methacrylate monomers and maleic anhydride (MA). The effect of the monomers and the ratio of monomers in the copolymer on lithographic performance and etch rate has been studied. Lithographic evaluation of some of these polymers has shown resolution down to 80 nm using conventional 193 nm illumination and standard development conditions, particularly for semi and fully isolated lines. This paper will report the chemistry of the polymer platform and relative advantages of having certain monomers in terms of lithographic performance and line edge roughness.
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