Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic

Abstract

We studied the growth of undoped GaAs epitaxial layers by molecular beam epitaxy using triethylgallium (TEG) and arsenic (As4). The variations in layer thickness over the 3-inch GaAs substrate decreased as the TEG flow rate increased. The carrier concentration of the undoped GaAs epilayer decreased as the As4 pressure increased at a constant TEG flow rate and the material converted from p- to n-type conductivity. The Hall mobility of the free carriers in the n-type film was 81,300 cm2/Vs (77 K) at a carrier concentration of n=4.1×1014 cm-3. This indicates a low level of compensation in the epilayer.