Abstract

Uniform Single Quantum Dot Emitters Controlling the position, size and shape of group III-nitride quantum dots is critical for the development of scalable single quantum emitters operable at room temperature. In article number 2202085, Yong-Hoon Cho and colleagues present a methodology for highly uniform, site-controlled GaN micro-pyramidal structures with a high degree of hexagonal symmetry by adjusting growth conditions under the self-limited growth mechanism. By successively growing a thin InGaN layer on the uniform pyramidal arrays with growth rate anisotropy, high-performance single photon emission from the apex of each pyramid can be achieved with suppressed background emission from side quantum wells of the pyramids.

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