Abstract
We report on the design, fabrication and performance of the first hetero-integrated III-V on silicon sampled-grating distributed Bragg reflector lasers (SGDBR) operating in the O-band and based on direct bonding and adiabatic coupling. Two devices with different geometric parameters are presented both showing an output power in the Si waveguide as high as 7.5 mW and a continuous tuning range of 27 and 35 nm respectively with a side mode suppression ration higher than 35 dB.
Highlights
As copper interconnects and microelectronics circuits fail meeting the growing data stream demand, research has turned to fiber-based optics as a way to transfer data on a broader band and a longer reach
We report on the design, fabrication and performance of the first hetero-integrated III-V on silicon sampled-grating distributed Bragg reflector lasers (SGDBR) operating in the O-band and based on direct bonding and adiabatic coupling
This is close to the state of the art value of ± 1.45% reached at 1.55 μm in [9] with a double-ring based architecture
Summary
As copper interconnects and microelectronics circuits fail meeting the growing data stream demand, research has turned to fiber-based optics as a way to transfer data on a broader band and a longer reach. To cite this version: Hélène Duprez, C. Tunable heterogeneously integrated III-V on silicon sampled-grating distributed Bragg reflector lasers operating in the O-band.
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