Abstract
ZnO bilayer films were deposited by a low-pressure metalorganic chemical vapor deposition technique in a single process step, by doping with boron only the nucleation stage of the growth. The resulting 2μm thick layers are characterized by low free carrier absorption and electron mobilities over 40cm2/Vs. They therefore combine high transparency in the infrared region and moderate sheet resistances of 30Ω/sq. It is thought that the controlled introduction of boron in the early nucleation stage enables its diffusion through the layer, resulting in a very efficient reduction of the sheet resistance compared to samples deposited without doping, while preserving a strong light-scattering interface. These properties make ZnO bilayers ideal electrodes for the development of micromorph thin-film solar cells with enhanced photo-generated current.
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