Abstract

Silicon nitride layers (thickness about 0.1–06 μm) were synthesized by the chemical vapour deposition method on inner surfaces of quartz glass tube substrates from a mixture of SiH 4 (3% by volume) with N 2 and pure ammonia gas. Pure argon was the carrier gas. It was ascertained that homogeneous nucleation reduced the transparency of the layer by an extent depending on the degree of its participation. For example, Si 3N 4 layers 0.2 μm thick, synthesized without the participation of homogeneous nucleation, exhibited a decrease in visible light transmission of 1–3%. Homogeneous nucleation reduced the light transmission even as much as 20%.

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