Abstract
In this letter, high-performance, highly transparent amorphous InGaZnO (IGZO) thin-film transistors (TFTs) with IGZO source/drain electrodes were fabricated. Rapid thermal annealing treatment effectively converted IGZO from a semiconductor into a conductor. Using a patterned SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> capping layer, highly transparent IGZO-TFTs with selectively formed IGZO electrodes were fabricated on a glass substrate. The mobility of the fabricated IGZO-TFT was 8.3 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V s, ON/OFF ratio was 3.1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> , and subthreshold swing was 0.44 V/decade. Thus, the proposed scheme provides a simple and practical method of fabricating high-performance, highly transparent IGZO TFTs.
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