Abstract
Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10−7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.
Highlights
Thin-film transistors (TFTs) based on transparent conductive oxide (TCO) materials have attracted increasing attention for their applications in optoelectronic devices and ultraviolet (UV) light detectors in the past few years, due to their advantages including a wide-band gap, suitable optical transparency, simple solution-based manufacturing, and low-temperature processability [1,2,3,4]
The electrical characteristics recovered their initial states after the visible-light illumination was turned off. These results indicate that highly transparent phototransistors based on zinc oxide (ZnO) thin-film transistors (TFTs) with an AuNP structure that are highly photo-sensitive to visible-light wavelength can be fabricated using transparent, conductive oxide materials and metallic nanoparticles with a wide bandgap material
Highly transparent ZnO-based TFTs with AuNPs were fabricated on a fluorine-doped tin oxide (FTO) structure, In summary, highly transparent ZnO-based TFTs with AuNPs were fabricated on a FTO
Summary
Thin-film transistors (TFTs) based on transparent conductive oxide (TCO) materials have attracted increasing attention for their applications in optoelectronic devices and ultraviolet (UV) light detectors in the past few years, due to their advantages including a wide-band gap, suitable optical transparency, simple solution-based manufacturing, and low-temperature processability [1,2,3,4]. Solution-based processing of TCO materials, such as zinc oxide (ZnO), Ga2 O3 and SnO2 have been extensively studied for application in the channel layer and ultraviolet (UV) optical band detecting layer [5,6]. These materials have been used a photodetecting layer, which can convert a UV wavelength region into an electrical signal. An intrinsically wide band-gap limits the light absorption of a high-energy
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