Abstract
(001)-oriented Ru films were prepared on SiO2/Si substrates by rf magnetron sputtering using a mixed gas of Ar and O2 with an appropriate O2 flow ratio which was lower than that required for RuO2 formation. Oxygen atoms are believed to play a role as a surfactant and to enhance single oriented growth of Ru films. Next, highly (100)-oriented RuO2 films were deposited on the Ru films by reactive sputtering. The (100)-oriented growth of the RuO2 films is thought to originate from local epitaxial growth on (001)-oriented Ru grains because the mismatch between superlattices of Ru (001) and RuO2 (100) planes is small. Full-widths at half maximum (FWHMs) of 1.8° and 2.1° were obtained for the X-ray diffraction (XRD) rocking curves of Ru (002) and RuO2 (200) peaks, respectively. The highly textured RuO2/Ru electrodes are expected to be useful for dynamic random access memory (DRAM) and ferroelectric random access memory (FeRAM) technologies.
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