Abstract
We describe the design, gas-source MBE growth, and performance of a highly strained photovoltaic intersubband detector with peak responsivity between 3 and 4μm. The absorbing region is composed of a highly strained InGaAs–InAs–InAlAs–AlAs heterostructure with its average lattice constant matched to InP. The detector design is based on a combination of bound-to-bound and bound-to-continuum transitions, which together allow a broad-band photoresponse, comparable to that of detectors with heterogeneous absorption region.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
