Highly stacked InGaAs quantum dot laser diodes fabricated by ultrahigh‐rate molecular beam epitaxial growth technique

Fumihiko Tanoue,Hiroharu Sugawara,Naokatsu Yamamoto,Kouichi Akahane

doi:10.1002/pssc.201100287

Highly stacked InGaAs quantum dot laser diodes fabricated by ultrahigh‐rate molecular beam epitaxial growth technique

Fumihiko Tanoue, Hiroharu Sugawara + Show 2 more

https://doi.org/10.1002/pssc.201100287

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Journal: physica status solidi (c)	Publication Date: Jan 1, 2012
Citations: 5

Affiliation: Tokyo Metropolitan University, National Institute of Information and Communications Technology

#Molecular Beam Epitaxial Growth Technique #Stripe Laser Diodes + Show 8 more

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Abstract

AbstractUp to 19 stacks of high‐density (∼5 × 1010 cm‐2) self‐assembled InGaAs quantum dots (QDs) on a GaAs (001) substrate were fabricated by ultrahigh‐rate (1.0 ML/s) solid‐source molecular beam epitaxial (MBE) deposition. Using these QDs, stripe laser diodes were designed and fabricated for use in 1.0‐μm waveband applications, and their operation at room‐temperature was investigated. Laser diodes having a larger number of QDs in the active region exhibited lower threshold current densities. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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