Abstract
We report In0.4Ga0.6As quantum dot (QD) solar cells with In0.2Ga0.8As cap layers, which extends the photoabsorption spectra toward a wavelength longer than those of In0.4Ga0.6As QD solar cells without cap layers. Well-aligned 50-stack In0.4Ga0.6As QD structures with In0.2Ga0.8As cap layers can be grown without using a strain balancing technique. The photoluminescence wavelength of ten-stack In0.4Ga0.6As QDs with an In0.2Ga0.8As cap layer becomes longer, as a result of the reduced strain in the QDs achieved by using the cap layer. The cell characteristics of multistacked In0.4Ga0.6As QD solar cells are improved by employing In0.2Ga0.8As cap layers.
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