Abstract
In this letter, the resistive random access memory (RRAM) with metal-insulator-metal structure is investigated for the first time under radiation conditions. The fabricated Cu-doped HfO2-based RRAM devices are found to have immunity from 60Co γ ray of various dose ranges. The basic RRAM parameters such as high-resistance state, low-resistance state, SET/RESET voltages, operation speed, and endurance have nearly no degradation after 60Co γ ray treatment with a total dose as high as 3.6 × 105 rad (Si). Furthermore, a retention characteristic of 105 s is also achieved during radiation. The highly stable characteristics of Cu-doped HfO2 -based RRAM devices under radiation provide RRAM a great potential for aerospace and nuclear applications.
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