Abstract
Sol–gel dip coating technique was employed to prepare Cu-doped SnO 2 thin films, which were able to detect H 2 S gas at room temperature with high sensitivity and revealed fast response characteristics. The highest sensor response (the ratio of resistance in air versus in H 2 S) was 3648 under H 2 S concentration of 68.5 ppm at room temperature. Recoverability of the thin films appeared when the temperature raised to 50 °C. The films were analyzed by means of XRD and the dried gel powder was studied by TG-DTA test. Influences of sintering temperature and doping level on the H 2 S response are discussed. The average grain size of the SnO 2 was about 25 nm.
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