Abstract
An ultraviolet photodiode based on rutile TiO2 nanorods, which were grown on p-type Si substrate seeded with a TiO2 layer, was synthesized by radiofrequency reactive magnetron sputtering. Chemical bath deposition was performed to grow rutile TiO2 nanorods. X-ray diffraction and field emission-scanning electron microscopy were conducted to determine the structural and optical properties of the sample. The synthesized TiO2 nanorods exhibited tetragonal rutile structure. The device showed 3.79×102 sensitivity when it was exposed to 325nm light (1.6mW/cm) at 5V bias voltage. In addition, the internal gain of the photosensor was 4.792 and the photoresponse peak was 460mA/W. The photocurrent was 6.09×10−4A. The response and recovery times of the PD were 50.8 and 57.8ms, respectively, upon illumination of a pulsed UV light (325nm, 1.6mW/cm2) at 5V bias voltage.
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