Abstract

In this paper, for the first time, we introduce a simple and low cost hydrazine sensor based on a commercial junction field-effect transistor (JFET). The transistor was mechanically treated, isolated, and used as an ion sensitive FET (ISFET) for hydrazine detection, after the electrodeposition of the sensing membrane on its metal gate surface. Copper hexacyanoferrate nanoparticles as suitable sensing membrane were electrodeposited on the copper metal gate of transistor from a solution containing K4Fe(CN)6 by a cyclic voltammetry method. The prepared sensor showed a super-Nernstian response of 94.8 mV pHyd−1 over a linear concentration range of $1.17\times 10^{-5}$ – $2.15\times 10^{-2}$ M, a very low drift of 0.04 mV h−1, and the detection limit of $3.16~\mu \text{M}$ . Also, the various ISFET characteristics of the prepared sensor were studied and discussed.

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