Highly sensitive detection of near-field Raman scattered light from strained Si∕SiGe heterostructures by scanning near-field optical Raman microscope using ultraviolet resonant Raman scattering

Abstract

We have developed a scanning near-field Raman microscope (SNORM) with a hollow pyramidal probe that uses ultraviolet resonant Raman scattering and measured changes in the near-field and far-field Raman intensities of strained Si∕SiGe heterostructures as a function of a probe-sample distance R. We observed that the near-field Raman intensity of a strained Si film dramatically decreased with an increase in the probe-sample distance. The decay curve of the near-field Raman intensity was approximately expressed by the R−3 plot calculated from a simple model based on dipole-dipole interaction. This confirms that our SNORM detects the near-field light from the sample.