Highly sensitive CMOS plasmon detector with a low‐gain buffer amplifier for terahertz imaging systems

Abstract

AbstractA CMOS plasmon detector with a low‐gain buffer amplifier, which enhances the characteristics of the detector core, is proposed for improving the performance of THz imaging systems. A high voltage gain (AV) of the main amplifier integrated with the detector improves the voltage responsivity (RV) but not the performances of the detector core itself. The increase in the ratio of the RV to the noise‐equivalent power (NEP) in the proposed detector with a low‐gain buffer can improve the signal‐to‐noise ratio (SNR) of the THz images. The proposed detector with a − 1.5 dB AV buffer amplifier is fabricated by TSMC 0.25 μm CMOS technology and measured to have the RV of 357.1 kV/W and NEP of 57.3 pW/√Hz at the gate bias of 0.17 V for 0.2 THz input signals. The measurement results indicate that the proposed detector has an RV lower than that of a detector with an AV of 11.2 dB exhibiting a similar NEP. The obtained 0.2 THz raster scanning images show that the image SNR can be improved by 14.8 dB using in the proposed detector.