Abstract
In this work, we report a novel and feasible strategy for the practical applications of one-dimensional ultrasensitive phototransistors made of tungsten-doped VO2 single nanowires. The photoconductive response of the single nanowire device was investigated under different visible light excitations (405 nm, 532 nm, and 660 nm). The phototransistor device exhibited ultrafast photoresponse, high responsivity, broad multispectral response, and rapid saturation characteristic curves. These promising results help to promote the applications of this material in nano-scale optoelectronic devices such as efficient multispectral phototransistors and optical switches.
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