Highly selective ultraviolet aluminum plasmonic filters on silicon

Abstract

We report the use of aluminum patterning to make highly selective UV bandpass filters. We design and fabricate a periodic array of nanoholes in Al thin film on a bare silicon substrate as an analog for potential integration with a Si photodetector. Arrays were designed to operate in the wavelength range of 200-400 nm. Our results show that we can obtain a single dominant peak filter with a linewidth of 30 nm at normal incidence, in contrast to similar structures on glass substrates, where multiple modes influence the UV spectrum. Varying the angle of incidence is shown to split the plasmonic mode and further decrease the linewidth of the maximum wavelength mode down to 10 nm. Our results therefore show high potential for applications in solid-state image sensors for astronomy and planetary studies.