Abstract
Highly selective etching of over has been investigated employing F and Cl atoms generated by the microwave discharge of an mixture. F atoms alone react spontaneously with both and , leading to insufficient selectivity. By adding to , most of the F atoms are rapidly converted to interhalogen by a titration reaction with in the gas phase. The resultant molecules etch as well as Si, but do not react with without any radiation assistance. As a result, infinite selectivity has been achieved. The faster etching for is attributed to a lower ionicity in the chemical bond state for than that for .
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