Abstract
Highly selective and precisely controlled aluminum etching was investigated by using plasma with a new Ar/HBr/CH3F/O2 gas chemistry. Generally, an aluminum surface is oxidized, leading to difficulties in the precise control of nm/min-level aluminum etching with a high selectivity to SiO2 of more than 10. The new gas chemistry enabled precise aluminum etching with a high selectivity to oxide of 10 and a low etching rate of 10 nm/min. In this gas chemistry, the aluminum surface remained oxidized by oxygen during etching and the oxidized surface was reduced by CH3F. The oxidized aluminum surface was etched by radicals from CH3F and the etching rate was decreased by HBr.
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