Abstract
Highly selective, low damage atomic layer etching (ALET) technology was developed for dry gate recess during the fabrication of InGaAs∕InP∕InAlAs high electron mobility transistors lattice matched to InP substrates. Etching characteristics of InP layer on top of InAlAs layer and the surface chemistry of the exposed InAlAs layer were investigated by utilizing angular resolved x-ray photoelectron spectroscopy. Finally, InAlAs Schottky diodes were fabricated by utilizing chlorine-based ALET technology and conventional Ar-based dry recess and their electrical characteristics were compared. By using the ALET, the etch selectivity as high as 70:1 was achieved for InP over InAlAs heterostructures and the stoichiometric modification of InAlAs was observed to be negligible after the recess etch process. Schottky diodes fabricated after the ALET exhibited the lower ideality factor and the higher Schottky barrier height compared to those fabricated with Ar-based plasma etching.
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