Abstract
A novel vertical channel phase change random access memory (PCRAM) for application in high-density PCRAM technology with high scalability and small unselected cell current is proposed. The channel of the select transistor and the phase change material are integrated in a vertical structure. A side wall process for the self-aligned phase change material is suggested and memory operation is verified by three-dimensional (3D) device simulation. In addition, memory characteristics are compared for different types of select metal–oxide–semiconductor field-effect transistor (MOSFET).
Published Version
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